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| SI2319DS Vishay Siliconix P-Channel 40-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) -40 40 FEATURES D TrenchFETr Power MOSFET ID (A)b rDS(on) (W) 0.082 @ VGS = -10 V 0.130 @ VGS = -4.5 V APPLICATIONS D Load Switch -3.0 -2.4 TO-236 (SOT-23) G 1 3 D Ordering Information: SI2319DS-T1 SI2319DS-T1--E3 (Lead Free) S 2 Top View SI2319DS (C9)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)b Pulsed Drain Currenta Continuous Source Current (Diode Conduction)b Power Dissipationb Operating Junction and Storage Temperature Range TA= 25_C TA= 70_C TA= 25_C TA= 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 5 sec -40 "20 -3.0 -2.4 -12 -1.0 1.25 0.8 Steady State Unit V -2.3 -1.85 A -0.62 0.75 0.48 -55 to 150 W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb Maximum Junction-to-Ambientc Maximum Junction-to-Foot (Drain) Notes a. Pulse width limited by maximum junction temperature. b. Surface Mounted on FR4 Board, t v 5 sec. c. Surface Mounted on FR4 Board. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 72315 S-40844--Rev. B, 03-May-04 www.vishay.com RthJA RthJF Symbol Typical 75 120 40 Maximum 100 166 50 Unit _C/W 1 SI2319DS Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-Resistance Drain Source On Resistancea Forward Transconductancea Diode Forward Voltage V(BR)DSS VGS(th) IGSS IDSS ID(on) rDS( ) DS(on) gfs VSD VGS = 0 V, ID = -250 mA VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "20 V VDS = -40 V, VGS = 0 V VDS = -40 V, VGS = 0 V, TJ = 55_C VDS v -5 V, VGS = -10 V VGS = -10 V, ID = -3.0 A VGS = -4.5 V, ID = -2.4 A VDS = -5 V, ID = -3.0 A IS = -1.25 A, VGS = 0 V -6 0.065 0.100 7.0 -0.8 -1.2 0.082 0.130 -40 -1.0 -3.0 "100 -1 -10 V nA mA A W S V Symbol Test Conditions Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qgs Qgd Ciss Coss Crss VDS = -20 V, VGS = 0, f = 1 MHz VDS = -20 V, VGS = -10 V ID ^ -3 A 11.3 1.7 3.3 470 85 65 pF 17 nC Switchingc Turn-On Turn On Time td(on) tr td(off) tf VDD = -20 V, RL =20 W ID ^ -1 0 A VGEN = -4 5 V -1.0 A, -4.5 Rg = 6 W 7 15 25 25 15 25 40 40 ns Turn-Off Time Notes a. Pulse test: PW v300 ms duty cycle v2%. b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially independent of operating temperature. S FaxBack 408-970-5600 www.vishay.com 2 Document Number: 72315 S-40844--Rev. B, 03-May-04 SI2319DS Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 20 Output Characteristics VGS = 10 thru 5 V 12 10 I D - Drain Current (A) 8 6 4 2 0 0.0 Transfer Characteristics 16 I D - Drain Current (A) 12 4V 8 TC = 125_C 25_C -55_C 4 1 V, 2 V 3V 0 0 2 4 6 8 10 VDS - Drain-to-Source Voltage (V) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.20 800 700 r DS(on)- On-Resistance ( W ) 0.16 C - Capacitance (pF) 600 500 400 300 200 100 0.00 0 2 4 6 8 10 12 ID - Drain Current (A) 0 0 5 10 Capacitance 0.12 Ciss VGS = 4.5 V VGS = 10 V 0.08 0.04 Coss Crss 15 20 25 30 35 40 VDS - Drain-to-Source Voltage (V) 10 VDS = 20 V ID = 3 A V GS - Gate-to-Source Voltage (V) 8 Gate Charge 1.8 1.6 rDS(on) - On-Resiistance (Normalized) 1.4 1.2 1.0 0.8 0.6 -50 On-Resistance vs. Junction Temperature VGS = 10 V ID = 3 A 6 4 2 0 0 2 4 6 8 10 12 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Document Number: 72315 S-40844--Rev. B, 03-May-04 www.vishay.com 3 SI2319DS Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 20 10 r DS(on)- On-Resistance ( W ) I S - Source Current (A) Source-Drain Diode Forward Voltage 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 On-Resistance vs. Gate-to-Source Voltage TJ = 150_C 1 ID = 3 A TJ = 25_C 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) 0.0 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.6 10 Single Pulse Power 0.4 V GS(th) Variance (V) 8 ID = 250 mA Power (W) 0.2 6 0.0 4 TA = 25_C Single Pulse -0.2 2 -0.4 -50 0 -25 0 25 50 75 100 125 150 0.01 0.1 1 10 100 1000 TJ - Temperature (_C) Time (sec) 100.0 Safe Operating Area, Junction-to-Case Limited by rDS(on) 10.0 I D - Drain Current (A) 10 ms 100 ms 1.0 1 ms 10 ms 0.1 TA = 25_C Single Pulse 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Square Wave Pulse Duration (sec) 100 ms dc, 100 s, 10 s, 1 s www.vishay.com 4 Document Number: 72315 S-40844--Rev. B, 03-May-04 SI2319DS Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 2 1 Normalized Effective Transient Thermal Impedance Normalized Thermal Transient Impedance, Junction-to-Ambient Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 0.02 PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 166_C/W Single Pulse 0.01 10-4 10-3 10-2 10-1 1 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Square Wave Pulse Duration (sec) Document Number: 72315 S-40844--Rev. B, 03-May-04 www.vishay.com 5 |
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